[Digital Daily, Kim Moon-ki] Infineon Technologies has strengthened its foothold in the automotive sector by securing a deal to provide crucial power semiconductors for Toyota’s latest electric vehicle model. Toyota, one of the world’s largest automakers, has chosen Infineon as a key supplier for its new EV.
Infineon announced on February 10 that its silicon carbide (SiC) power semiconductor, the ‘CoolSiC™ MOSFET,’ has been selected for Toyota’s new electric SUV, the ‘bZ4X.’
The supplied SiC MOSFET will be incorporated into the electric vehicle’s onboard charger (OBC) and DC/DC converter.
By utilizing SiC materials in the OBC and DC/DC converter, which are essential components of the EV powertrain, Infineon has achieved lower power loss compared to traditional silicon (Si) semiconductors. This innovation also enhances thermal resistance and high-voltage performance. As a result, the new technology contributes to extending the vehicle’s range and reducing charging times.
Peter Schaefer, Infineon’s Senior Vice President of Automotive Sales, commented, “Toyota’s decision to use Infineon’s CoolSiC technology is a significant vote of confidence. SiC will play a pivotal role in improving the efficiency and performance of electric vehicles, shaping the future of mobility. Infineon is committed to meeting the growing demand for power semiconductors with our unwavering focus on quality.”
From a technical standpoint, Infineon’s CoolSiC MOSFET employs a proprietary ‘Trench Gate’ structure.
This innovative design allows for a smaller chip size while reducing on-resistance when current flows, resulting in decreased conduction and switching losses. Furthermore, by optimizing parasitic capacitance and gate threshold voltage, Infineon has simplified the drive circuit. These improvements enhance the compact design and reliability of both the OBC and DC/DC converter.
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